DocumentCode :
341458
Title :
A process independent ESD design methodology
Author :
Bernie, J.C. ; Croft, G.D. ; Young, W.R.
Author_Institution :
Harris Semicond., Melbourne, FL, USA
Volume :
1
fYear :
1999
fDate :
36342
Firstpage :
218
Abstract :
A methodology has been developed to design ESD protection networks which is independent of the integrated circuit fabrication process employed. The actual devices used to implement the methodology, however are process specific. The basic methodology uses forward biased diodes from each signal input or output lead to divert the ESD current to the supply lines and a clamp to limit the maximum voltage across the supplies. This technique has been successfully applied to processes built on dielectrically isolated, bonded, or junction isolated wafers and has successfully protected bipolar, MOS, and BiCMOS devices used to fabricate analog, digital, mixed signal, and RF circuits
Keywords :
electrostatic discharge; integrated circuit design; monolithic integrated circuits; protection; BiCMOS devices; ESD protection network design; MOS devices; bipolar devices; bonded wafers; clamp; dielectrically isolated wafers; forward biased diodes; junction isolated wafers; maximum voltage; process independent ESD design methodology; Clamps; Current supplies; Design methodology; Dielectric devices; Diodes; Electrostatic discharge; Fabrication; Protection; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
Type :
conf
DOI :
10.1109/ISCAS.1999.777842
Filename :
777842
Link To Document :
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