• DocumentCode
    341458
  • Title

    A process independent ESD design methodology

  • Author

    Bernie, J.C. ; Croft, G.D. ; Young, W.R.

  • Author_Institution
    Harris Semicond., Melbourne, FL, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    36342
  • Firstpage
    218
  • Abstract
    A methodology has been developed to design ESD protection networks which is independent of the integrated circuit fabrication process employed. The actual devices used to implement the methodology, however are process specific. The basic methodology uses forward biased diodes from each signal input or output lead to divert the ESD current to the supply lines and a clamp to limit the maximum voltage across the supplies. This technique has been successfully applied to processes built on dielectrically isolated, bonded, or junction isolated wafers and has successfully protected bipolar, MOS, and BiCMOS devices used to fabricate analog, digital, mixed signal, and RF circuits
  • Keywords
    electrostatic discharge; integrated circuit design; monolithic integrated circuits; protection; BiCMOS devices; ESD protection network design; MOS devices; bipolar devices; bonded wafers; clamp; dielectrically isolated wafers; forward biased diodes; junction isolated wafers; maximum voltage; process independent ESD design methodology; Clamps; Current supplies; Design methodology; Dielectric devices; Diodes; Electrostatic discharge; Fabrication; Protection; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.777842
  • Filename
    777842