Title :
Integrated p-i-n/HBT photoreceivers for optical communications
Author :
Lunardi, L.M. ; Chandrasekhar, S.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We will review the present status of our optoelectronic integrated circuits (OEICs) for lightwave communications applications. In a single channel, a photoreceiver module, composed of a p-i-n photodetector monolithically integrated with an InP/InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier has measured sensitivity of -17.0 dBm for 20 Gb/s operation, at a bit-error-rate of 10/sup -9/. Eight-channel array modules performed at 2.5 Gb/s with an average sensitivity of -25 dBm and crosstalk penalties ranging from 0.2 to 2.6 dB, for a bit-error-rate of 10/sup -9/.
Keywords :
heterojunction bipolar transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; 20 Gbit/s; InP-InGaAs; bit-error-rate; crosstalk; heterojunction bipolar transistor; monolithic integration; multi-channel array module; optical communication; optoelectronic integrated circuit; p-i-n photodetector; photoreceiver; sensitivity; transimpedance amplifier; Application specific integrated circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; Operational amplifiers; Optical amplifiers; Optical fiber communication; PIN photodiodes; Photodetectors;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554064
