Title :
71% PAE C-band GaN power amplifier using harmonic tuning technology
Author :
Yang Lu ; Mengyi Cao ; Jiaxing Wei ; Bochao Zhao ; Xiaohua Ma ; Yue Hao
Author_Institution :
Wide Bandgap Semicond. Technol. Disciplines State Key Lab., Xidian Univ., Xi´an, China
Abstract :
A high-efficiency C-band internally matched power amplifier, developed with 12 mm AlGaN/GaN high-electron mobility transistors is described. The second-harmonic frequency (2f0) tuning network is applied to confine the impedance at 2f0 in safe efficiency regions. The packaged power amplifier achieves 71% power-added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C-band GaN power amplifiers reported to date.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; AlGaN-GaN; PAE; efficiency 71 percent; gain 17 dB; high-efficiency C-band internally matched power amplifier; high-electron mobility transistor; power 102 W; power-added efficiency; second harmonic frequency tuning network; size 12 mm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2092
