DocumentCode :
3414820
Title :
64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method
Author :
Franca-Neto, L.M. ; Bishop, Ralph ; Bloechel, B.A.
Author_Institution :
Intel R&D Labs, Hillsboro, OR, USA
fYear :
2004
fDate :
15-19 Feb. 2004
Firstpage :
444
Abstract :
A method to optimally pump energy from the transistors to the passive network is presented for the design of integrated 64 GHz and 100 GHz VCOs in 90 nm CMOS. The VCOs use an on-die distributed network, draw ∼25 mA from a 1 V supply and produce oscillations with 0.4 Vp-p amplitudes. Phase noise is <-110 dBc/Hz at 10 MHz offset, and VCO gain is 2 GHz/V.
Keywords :
CMOS integrated circuits; field effect MIMIC; integrated circuit design; integrated circuit measurement; integrated circuit noise; millimetre wave oscillators; nanoelectronics; passive networks; phase noise; voltage-controlled oscillators; 0.4 V; 1 V; 100 GHz; 25 mA; 64 GHz; 90 nm; CMOS VCO; VCO gain; integrated VCO design; on-die distributed network; optimal energy pump method; optimum pumping method; oscillations; passive network; phase noise; CMOS logic circuits; CMOS technology; Frequency; Impedance; Microwave transistors; Mixers; Passive networks; Stability; Transmission lines; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN :
0193-6530
Print_ISBN :
0-7803-8267-6
Type :
conf
DOI :
10.1109/ISSCC.2004.1332785
Filename :
1332785
Link To Document :
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