Monolithic integrated MSM-2DEG PD/HEMT photoreceiver based on an identical InP/InGaAs heterostructure

Author

Horstmann, M. ; Marso, H. ; Schimp, K. ; Kordos, P.

Author_Institution

Inst. of Thin Films & Ion Technol., Res. Centre Julich, Germany

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

653

Lastpage

656

Abstract

A monolithic integrated photoreceiver for long-haul high-speed optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices as well as results on receiver circuits are presented. The MSM-2DEG photodetector exhibits a 0.21A/W responsivity and a 16GHz bandwidth. The HEMT amplifiers have 45/85GHz f/sub T//f/sub max/. A 7GHz bandwidth and 100V/W responsivity is measured on an inductive tuned front-end receiver.

Keywords

high electron mobility transistors; integrated optoelectronics; optical receivers; photodetectors; 16 GHz; 7 GHz; HEMT amplifier; InP-InGaAs; InP/InGaAs heterostructure; MSM photodetector; MSM-2DEG PD/HEMT photoreceiver; inductive tuned front-end receiver; long-haul high-speed optoelectronic transmission; monolithic integration; Absorption; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Insulation; Integrated circuit measurements; Optical beams; Optical sensors; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554066

Filename

554066