Title :
A vertical-cavity P-i-N SiGe/Si photodetector for Si-based OEICs
Author :
Morikawa, T. ; Sugiyama, M. ; Tatsumi, T. ; Sato, K. ; Tashiro, T.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
We present a novel vertical-cavity P-i-N SiGe/Si photodetector built in a bonded Silicon-On-Insulator (SOI) substrate. A new hybrid time-sharing gas supply scheme for the vertical-cavity photodetector is developed. The vertical-cavity photodetector on a bonded SOI exhibits a high external quantum efficiency (/spl eta//sub exl/) of 60% with a low dark current of 0.5 pA//spl mu/m/sup 2/ and a high photoresponse of 7.8 Gbit/s at /spl lambda/=980 nm.
Keywords :
Ge-Si alloys; integrated optoelectronics; p-i-n photodiodes; photodetectors; semiconductor materials; silicon-on-insulator; 60 percent; 7.8 Gbit/s; 980 nm; OEIC; SiGe-Si; bonded SOI substrate; dark current; external quantum efficiency; hybrid time-sharing gas supply; photoresponse; vertical-cavity P-i-N SiGe/Si photodetector; Bonding; Epitaxial growth; Germanium silicon alloys; Optical interconnections; Optoelectronic devices; PIN photodiodes; Photodetectors; Silicon germanium; Silicon on insulator technology; Time sharing computer systems;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554068
