Title :
A 12dBm 320GHz GBW distributed amplifier in a 0.12μm SOI CMOS
Author :
Jonghae Kim ; Plouchart, J.-O. ; Zamdmer ; Groves, Rob ; Sherony, M. ; Tan, Yongdong ; Talbi, Mohamed ; Safran, John ; Wagner, Libor
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
This paper describes a 9-stage distributed amplifier which achieves 11 dB gain and 90 GHz 3dB cut-off frequency, equivalent to a 320 GHz GBW. The measured 1 dB output compression point is 12 dBm at 20 GHz, the OIP3 is 15.5 dBm at 50 GHz, and the noise figure is 5.5 dB at 18 GHz.
Keywords :
CMOS analogue integrated circuits; distributed amplifiers; millimetre wave amplifiers; silicon-on-insulator; wideband amplifiers; 0.12 micron; 11 dB; 18 GHz; 20 GHz; 5.5 dB; 50 GHz; 90 GHz; SOI CMOS; broadband amplifiers; distributed amplifier; CMOS technology; Capacitors; Cutoff frequency; Distributed amplifiers; FETs; Gain measurement; MMICs; Noise figure; Power transmission lines; Resistors;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332802
