Title :
Epitaxial SiGeC/Si photodetector with response in the 1.3-1.55 /spl mu/m wavelength range
Author :
Huang, F.Y. ; Thomas, S.G. ; Chu, M. ; Wang, K.L. ; Theodore, N.D.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
We demonstrate a Si-based photodetector with a response in the 1.3-1.55 /spl mu/m wavelength range. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 /spl Aring/. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-/spl mu/m long waveguide is 0.2% at 1.55 /spl mu/m, and 8% at 1.3 /spl mu/m. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 /spl mu/m wavelength range.
Keywords :
Ge-Si alloys; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor materials; 0.2 to 8 percent; 1.3 to 1.55 micron; SiGeC-Si; butt coupling; epitaxial SiGeC/Si photodetector; external quantum efficiency; high speed characteristics; leakage current density; multiple layer absorber; optical fiber communications; optical interconnect; pin photodiode; pseudomorphic SiGeC alloy; single-mode fiber; waveguide; Absorption; Germanium alloys; Leakage current; Optical fiber communication; Optical fibers; Optical waveguides; PIN photodiodes; Photodetectors; Silicon alloys; Substrates;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554069
