Title :
High-speed microwave thin-film transistors based on transferrable semiconductor nanomembranes
Author :
Jung-Hun Seo ; Weidong Zhou ; Zhenqiang Ma
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper covers the aspects of material preparation, device fabrication, and process integration using transferrable monocrystalline silicon (Si) nanomembranes (NM) for flexible electronics operating in high frequency domain. Methods of releasing Si NM from silicon-on-insulator (SOI) source substrates and transferring it to flexible substrates are briefly described. The evolvement of radio frequency (RF) flexible Si thin-film transistors (TFT) structures is described in detail. The continuous performance enhancement of TFTs owning to process and TFT structure innovations is analyzed. Due to the intrinsic similarity between flexible monocrystalline Si nanomembrane based devices and the commercial rigid Si devices, effectively adopting the mature techniques used in rigid semiconductor industry is promising to boost flexible device performance in the future.
Keywords :
elemental semiconductors; flexible electronics; membranes; microwave field effect transistors; nanostructured materials; performance evaluation; silicon; silicon-on-insulator; thin film transistors; RF flexible silicon TFT structures; SOI source substrates; Si; continuous performance enhancement; device fabrication; flexible device performance; flexible electronics; flexible monocrystalline silicon nanomembrane-based devices; high frequency domain operation; high-speed microwave thin film transistors; intrinsic similarity; material preparation; process integration; radiofrequency flexible silicon thin film transistors; rigid semiconductor industry; rigid silicon devices; silicon NM releasing method; silicon-on-insulator source substrates; transferrable monocrystalline silicon nanomembranes; transferrable semiconductor nanomembranes; Flexible electronics; Logic gates; Radio frequency; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467577
