Performance improvement for Metal/Al2O3/HfO2/SiO2/Si structure nonvolatile flash memory by fluorine plasma treatment

Author

Chen-Jie Wang ; Zong-Liang Huo ; Ming Liu

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, the effects of fluorine plasma treatment on Metal/Al₂O₃/HfO₂/SiO₂/Si (MAHOS) memory structure have been investigated. With a pre-fluorine plasma treatment, MAHOS device shows enhanced program/erase (P/E) efficiency and improved room temperature/high temperature data retention characteristic. The improvement of memory performance is primarily owing to the annihilation of shallow traps originated from oxygen vacancies and interface states near HfO-SiO interface by fluorine passivation which are confirmed by X-ray photoelectron spectroscopy (XPS) depth profile analysis and electrical characteristics.

Keywords

X-ray photoelectron spectra; aluminium compounds; flash memories; hafnium compounds; interface states; passivation; random-access storage; silicon; silicon compounds; vacancies (crystal); Al₂O₃-HfO₂-SiO₂-Si; HfO-SiO interface; MAHOS device; MAHOS memory structure; X-ray photoelectron spectroscopy; XPS depth profile analysis; enhanced program/erase efficiency; fluorine passivation; fluorine plasma treatment; high temperature data retention characteristic; interface states; nonvolatile flash memory; oxygen vacancies; shallow trap annihilation; temperature 293 K to 298 K; Hafnium compounds; Interface states; Plasma temperature; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467578

Filename

6467578