DocumentCode
3415220
Title
Cosmic-ray immune latch circuit for 90nm technology and beyond
Author
Arima, Yasunobu ; Yamashita, Takayoshi ; Komatsu, Yosuke ; Fujimoto, Takafumi ; Ishibashi, Koji
Author_Institution
STARC, Yokohama, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
492
Abstract
A cosmic-ray immune latch circuit is presented. The storage node is separated into three electrodes, and the soft error on one node can be corrected by the other two, even if there is a large and long-lasting influx of radiation-induced charges. The circuit is proved to have significant tolerance by utilizing a test chip.
Keywords
error correction; flip-flops; gamma-ray effects; majority logic; neutron effects; radiation hardening (electronics); 90 nm; cosmic-ray immune latch circuit; electrode separated storage nodes; radiation tolerance; radiation-induced charge influx; soft error correction; Circuit noise; Circuit testing; Cosmic rays; DH-HEMTs; Electricity supply industry; Flip-flops; Latches; Logic circuits; Neutrons; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332809
Filename
1332809
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