Title :
A 300MHz 25μA/Mb leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor
Author :
Yamaoka, Masanao ; Shinozaki, Y. ; Maeda, Noboru ; Shimazaki, Yasuhisa ; Kato, Kazuhiko ; Shimada, S. ; Yanagisawa, Kei
Author_Institution :
Hitachi, Tokyo, Japan
Abstract :
An on-chip 1 Mb SRAM, that has three modes of operation, for application processors is developed to reduce power consumption. It operates at 300 MHz, with leakage of 25 μA/Mb in the standby mode, and 50 μA/Mb in the low-leakage-active mode.
Keywords :
CMOS memory circuits; SRAM chips; leakage currents; low-power electronics; microprocessor chips; mobile handsets; 1 Mbit; 300 MHz; low-leakage-active mode; mobile-phone processor; on-chip SRAM module; process-variation immunity; reduced power consumption; standby mode; Batteries; Circuits; Energy consumption; Large scale integration; Leakage current; MOSFETs; Random access memory; Switches; Ultra large scale integration; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332810
