Self-diffuse nanostructures on silicon surfaces through rapid annealing at high temperatures

Self-diffuse nanostructures were investigated on silicon wafer surfaces with high temperature annealing of 1100°C under different ambiences. It is noted that hydrogen and nitrogen play an important role in the migration of silicon atoms at a high temperature, resulting in the formation self-diffused nanostructures. Furthermore, the interactions between silicon and hydrogen or nitrogen are analysed during rapid annealing at high temperatures.