• DocumentCode
    3415387
  • Title

    Power junction FETs (JFETs) for very low-voltage applications

  • Author

    Chang, Daniel ; Lee, Martin ; Chen, Dan ; Liva, Valentino

  • Author_Institution
    Lovoltech Inc., Santa Clara, CA, USA
  • Volume
    3
  • fYear
    2005
  • fDate
    6-10 March 2005
  • Firstpage
    1419
  • Abstract
    Recent power JFETs pose several significant advantages, compared to MOSFET. Advantages include lower RdonxCin figure of merit, simplicity in fabrication, immunity to electro-static discharge damages and absence of body diodes. Evaluation results show that JFETs can be attractive contenders for very low-voltage applications, especially in a case where normally-on characteristic is not a problem.
  • Keywords
    electrostatic discharge; junction gate field effect transistors; power field effect transistors; JFET; electro-static discharge; power junction FET; very low-voltage application; DC-DC power converters; Diodes; Fabrication; Immune system; JFETs; MOSFET circuits; Power MOSFET; Rectifiers; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
  • Print_ISBN
    0-7803-8975-1
  • Type

    conf

  • DOI
    10.1109/APEC.2005.1453215
  • Filename
    1453215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3415387