Title :
Power junction FETs (JFETs) for very low-voltage applications
Author :
Chang, Daniel ; Lee, Martin ; Chen, Dan ; Liva, Valentino
Author_Institution :
Lovoltech Inc., Santa Clara, CA, USA
Abstract :
Recent power JFETs pose several significant advantages, compared to MOSFET. Advantages include lower RdonxCin figure of merit, simplicity in fabrication, immunity to electro-static discharge damages and absence of body diodes. Evaluation results show that JFETs can be attractive contenders for very low-voltage applications, especially in a case where normally-on characteristic is not a problem.
Keywords :
electrostatic discharge; junction gate field effect transistors; power field effect transistors; JFET; electro-static discharge; power junction FET; very low-voltage application; DC-DC power converters; Diodes; Fabrication; Immune system; JFETs; MOSFET circuits; Power MOSFET; Rectifiers; Silicon; Threshold voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1453215
