DocumentCode :
3415438
Title :
Investigations of junctionless nanowire transistors with non-uniform channel
Author :
Yunxi Zhu ; Haijun Lou ; Binghua Li ; Xinnan Lin
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, the effects of non-uniform channel (NUC) in junctionless nanowire transistors (JNTs) are investigated and compared with those in inversion-mode field effect transistors (IMFETs) using three-dimensional simulations. The results show that, the variation of threshold voltage Vt in JNTs is 1.7 times of that in IMFETs and the fluctuation of off-state current Ioff is 2.8 times, which is mainly because that JNTs have bulk conduction channels and higher doping concentration in the channels. Hence, the process fluctuation for JNTs must be 30% or even smaller of that for IMFETs for similar performance variation. Furthermore, we conclude a formula based on the results to limit the variation of channel width.
Keywords :
doping; field effect transistors; fluctuations; nanowires; IMFET; JNT; NUC; bulk conduction channels; channel width; doping concentration; inversion-mode field effect transistors; junctionless nanowire transistors; nonuniform channel; off-state current fluctuation; performance variation; process fluctuation; three-dimensional simulations; threshold voltage; Doping; Electric fields; Fluctuations; Leakage current; Logic gates; Threshold voltage; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467591
Filename :
6467591
Link To Document :
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