A stacked capacitor with an MOCVD-(Ba,Sr)TiO/sub 3/ film and a RuO/sub 2//Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond

Author

Yamaguchi, H. ; Iizuka, T. ; Koga, H. ; Takemura, K. ; Sone, S. ; Yabuta, H. ; Yamamichi, S. ; Lesaicherre, P. ; Suzuki, M. ; Kojima, Y. ; Nakajima, K. ; Kasai, N. ; Sakuma, T. ; Kato, Y. ; Miyasaka, Y. ; Yoshida, M. ; Nishimoto, S.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

675

Lastpage

678

Abstract

A stacked high-/spl epsiv//sub r/ capacitor is fabricated using a 550/spl deg/C-process-tolerant RuO/sub 2//Ru storage node on a TiN-capped plug and an ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ (BST) thin film with small SiO/sub 2/ equivalent thickness (t/sub eq/) of 0.40 nm. The contact resistance (Rc) of a 0.15 /spl mu/m diameter (/spl phi/) contact is as low as 50 k/spl Omega/. With this capacitor technology, a cell capacitance (Cs) of 25 fF is achieved in projected areas of 0.055 /spl mu/m/sup 2/ for 4 Gbit DRAMs and 0.031 /spl mu/m/sup 2/ for 16 Gbit DRAMs with 0.25 /spl mu/m- and 0.37 /spl mu/m-high storage nodes.

Keywords

DRAM chips; barium compounds; plasma CVD coatings; strontium compounds; thin film capacitors; (BaSr)TiO/sub 3/; 16 Gbit; 25 fF; 4 Gbit; 550 C; DRAM; ECR plasma MOCVD BST thin film; RuO/sub 2/-Ru; RuO/sub 2//Ru storage node; TiN; TiN-capped plug; contact resistance; stacked capacitor; Argon; Binary search trees; Capacitors; Dielectric substrates; Dielectric thin films; Oxidation; Plasma applications; Plugs; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554071

Filename

554071