Title :
Design of CMOS low-noise amplifier for low-band ultra-wideband system
Author :
Huang, Zhe-Yang ; Chen, Chun-Chieh ; Huang, Che-Cheng ; Lu, Nan-Ku
Author_Institution :
Dept. of Electr. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan
Abstract :
In this paper, a low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of two shunt-peaked cascode amplifiers and it is fabricated in 0.18μm standard RF CMOS process. The LNA gives 18.03dB gain and 1.9GHz 3dB bandwidth (3.1-5.0GHz) while consuming 25.92mW through a 1.8V supply. Over the 3.1-5.0GHz frequency band, a minimum noise figure of 2.74dB and input return loss lower than -9.6dB have been achieved.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low noise amplifiers; microwave amplifiers; ultra wideband technology; wideband amplifiers; 0.18 micron; 1.8 V; 1.93 GHz; 18.03 dB; 2.74 dB; 25.92 mW; 3.1 to 5.0 GHz; CMOS low-noise amplifier; RF CMOS process; low-band ultra-wideband system; shunt-peaked cascode amplifiers; Bandwidth; Capacitance; Capacitors; Equations; Frequency; Impedance matching; Low-noise amplifiers; Narrowband; Noise figure; Ultra wideband technology; Low-Noise Amplifier (LNA); RFIC; Shunt-Peaked Amplifier; Ultra-Wideband (UWB);
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606978
