Fabrication of silicon highly-rich SiOx(x<0.75) and its novel resistive switching behaviors

The unipolar resistive switching characteristics are investigated in silicon highly-rich SiO_x (x<;0.75) films. Pt/SiO_0.732/Pt structure exhibits a good switching behavior with low operation voltage, long retention time, uniformly distributed resistance value and large memory widows etc. As-deposited SiO0732 films contain a large concentration (1×10¹⁹cm³) of dangling bonds and are rich in unsymmetric and polar O₃=Si-Si and SiO₂=Si-Si metastable configurations. We propose a model of silicon dangling bonds percolation path to explain the switching behavior.