Title :
Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application
Author :
Tung-Sheng Chen ; Hadad, D. ; Balu, V. ; Jiang, B. ; Shao-Hong Kuah ; McIntyre, P.C. ; Summerfelt, S.R. ; Anthony, J.M. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
(Ba,Sr)TiO/sub 3/ (BST) thin film capacitors using iridium (Ir) as an electrode material are investigated for high density (1 Gbit-scale and beyond) dynamic random access memories (DRAMs). Excellent electrical characteristics (e.g. high polarization and low leakage) of BST capacitors with Ir top electrodes were obtained. The excellent resistance of these capacitors to hydrogen damage during forming gas anneals is also reported.
Keywords :
DRAM chips; annealing; barium compounds; iridium; strontium compounds; thin film capacitors; (BaSr)TiO/sub 3/; 1 Gbit; BST thin film capacitor; DRAM; Ir; Ir electrode; electrical characteristics; forming gas anneal; hydrogen damage; leakage; polarization; Binary search trees; Capacitors; DRAM chips; Electric resistance; Electric variables; Electrodes; Hydrogen; Polarization; Random access memory; Transistors;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554072
