A new sub-micron 24 V SiGe:C resurf HBT

Author

MelaI, J. ; Magnee, P.H.C. ; Hueting, R.J.E. ; Neuilly, F.I. ; de Kort, R. ; Slotboom, J.W.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2004

fDate

24-27 May 2004

Firstpage

33

Lastpage

36

Abstract

For the first time a SiGe:C heterojunction bipolar transistor (HBT) is presented that uses the resurf effect to improve the cutoff frequency (f_T) for a specified collector-base junction breakdown voltage (BV_CB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region, the electric field profile can be reshaped so that a high breakdown voltage (>20 V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high f_T. Experimental results show an increase of the f_T×BV_CB0 product of up to a factor of two by using resurf, the maximum value obtained is 670 GHzV.

Keywords

Ge-Si alloys; carbon; current density; doping profiles; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor materials; 24 V; 28 GHz; SiGe:C; collector drift region; collector-base junction breakdown voltage; current density; cutoff frequency; electric field profile; heterojunction bipolar transistor; high drift doping concentration; intrinsic silicon filled trenches; resurf HBT; resurf effect; Carbon; Current density; Germanium alloys; Heterojunction bipolar transistors; Power bipolar transistors; Semiconductor materials; Silicon alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332849

Filename

1332849