Title :
A new sub-micron 24 V SiGe:C resurf HBT
Author :
MelaI, J. ; Magnee, P.H.C. ; Hueting, R.J.E. ; Neuilly, F.I. ; de Kort, R. ; Slotboom, J.W.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
For the first time a SiGe:C heterojunction bipolar transistor (HBT) is presented that uses the resurf effect to improve the cutoff frequency (fT) for a specified collector-base junction breakdown voltage (BVCB0). By using trenches filled with intrinsic silicon adjacent to the collector drift region, the electric field profile can be reshaped so that a high breakdown voltage (>20 V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high fT. Experimental results show an increase of the fT×BVCB0 product of up to a factor of two by using resurf, the maximum value obtained is 670 GHzV.
Keywords :
Ge-Si alloys; carbon; current density; doping profiles; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor materials; 24 V; 28 GHz; SiGe:C; collector drift region; collector-base junction breakdown voltage; current density; cutoff frequency; electric field profile; heterojunction bipolar transistor; high drift doping concentration; intrinsic silicon filled trenches; resurf HBT; resurf effect; Carbon; Current density; Germanium alloys; Heterojunction bipolar transistors; Power bipolar transistors; Semiconductor materials; Silicon alloys;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332849
