A novel 30 nm self-aligned bottom-gate MOSFET with edged source/drain-tie

This paper presents a non-classical architecture called the self-aligned bottom-gate MOSFET with edged source/drain-tie (SAESDTBG). According to the 2-D numerical simulation, the proposed structure can decrease source/drain (S/D) resistance that increases on state current (I_on). Also, it can achieve device characteristic comparable to traditional bottom-gate (TBG) MOSFET and can effectively reduce the self-heating effect (SHE), resulting in improved thermal stability. It can reduce 36.4% lattice temperature of channel and increase 19.2% electron velocity compared with TBG MOSFET because of our S/D-tie scheme.