• DocumentCode
    3415816
  • Title

    A 12V complementary RF LDMOS technology developed on a 0.18μm CMOS platform

  • Author

    Moscatelli, A. ; Contiero, C. ; Galbiati, P. ; Raffaglio, C.

  • Author_Institution
    STMicroelectronics, Italy
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    Complementary RF LDMOS devices have been successfully integrated for the first time in a 0.18 μm CMOS platform. A 12 V voltage capability and cut off frequency of 18 GHz and 12 GHz, respectively, for N-channel and P-channel devices have been obtained. In this paper, the complementary RF LDMOS architecture is presented together with device performances.
  • Keywords
    power MOSFET; 0.18 micron; 12 GHz; 12 V; 18 GHz; CMOS process; N-channel devices; P-channel devices; complementary RF LDMOS technology; Power MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332850
  • Filename
    1332850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3415816