DocumentCode :
3415841
Title :
Electrical characterization of CVD TiN upper electrode for Ta/sub 2/O/sub 5/ capacitor
Author :
Myoung-Bum Lee ; Hyeon-Deok Lee ; Byung-Lyul Park ; U-In Chung ; Young-Bum Koh ; Moon-Yong Lee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear :
1996
fDate :
8-11 Dec. 1996
Firstpage :
683
Lastpage :
686
Abstract :
CVD TiN using TiCl/sub 4/ and NH/sub 3/ chemistry has been implemented successfully in cylindrically shaped Ta/sub 2/O/sub 5/ storage capacitor as a barrier layer in poly-Si/TiN double upper electrode. Electrical characteristics of Ta/sub 2/O/sub 3/ capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was also found that minimizing chlorine content in CVD TiN film was essential to achieve low leakage current level, and in-situ post annealing of CVD TiN film in NH/sub 3/ ambient was effective in reducing chlorine content.
Keywords :
CVD coatings; conformal coatings; tantalum compounds; thin film capacitors; titanium compounds; CVD; Ta/sub 2/O/sub 5/; TiN; annealing; barrier layer; conformality; cylindrical Ta/sub 2/O/sub 5/ storage capacitor; electrical characteristics; leakage current; poly-Si/TiN double upper electrode; Annealing; Atherosclerosis; Capacitors; Chemical vapor deposition; Degradation; Electrodes; Planarization; Supercapacitors; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-3393-4
Type :
conf
DOI :
10.1109/IEDM.1996.554073
Filename :
554073
Link To Document :
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