RF LDMOS design based on modified CMOS process

Author

Ting Yu ; Dajie Zeng ; Nan Liu ; Xuejiao Chen ; Zhizhen Yin ; Yaohui Zhang ; Fuhua Yang

Author_Institution

Inst. of Semicond., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

Two types of RF LDMOS devices are developed by introducing LDMOS process to standard CMOS fab. The basic device structure is described and the load pull test setup was put up to evaluate the RF performance of both devices. Besides, an impedance transformer was utilized to minimize the mismatch between system and device impedance as well as increase measurement accuracy. The first type is 50V RF LDMOS device which achieves 100W saturated output power for one cell with power density of 1.16 W/mm at 1 GHz. The other one is 28V broadband LDMOS, which achieves a power of 30W with 73% power added efficiency at 1 GHz and 55% power added efficiency at 2 GHz without internal matching network.

Keywords

CMOS integrated circuits; impedance convertors; integrated circuit design; integrated circuit manufacture; integrated circuit testing; radiofrequency integrated circuits; CMOS; RF LDMOS design; complementary metal-oxide-semiconductor integrated circuits; frequency 1 GHz; frequency 100 GHz; frequency 2 GHz; impedance transformer; internal matching network; load pull test setup; power 100 W; power 30 W; voltage 28 V; voltage 50 V; Broadband communication; Impedance; Logic gates; Performance evaluation; Power generation; Radio frequency; Tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467620

Filename

6467620