Title :
New routes for advanced 3D Heterogeneous Integration on silicon
Author :
Deleonibus, Simon
Author_Institution :
CEA-LETI, Grenoble, France
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and reduced variability. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will be introduced to make it possible.
Keywords :
CMOS integrated circuits; nanoelectronics; silicon; CMOS based technology; Si; advanced 3D heterogeneous integration; back end level; disruptive architectures; front end level; functional diversification; heterogeneous integration; nanoelectronics; CMOS integrated circuits; Logic gates; MOSFETs; Nanowires; Silicon; Silicon compounds; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467621
