Title :
Application of test & measure in microwave device characterization
Author :
Chen, Zhanfei ; Sun, Lingling
Author_Institution :
Microelectron. CAD Center, Hang Zhou Dianzi Univ., Zhejiang, China
Abstract :
This paper describes the application of T&M (test and measure) in device characterization which is used in RF/MW field. With the on-wafer measured results of CV, IV and S-parameter in certain bias conditions, the performance of devices can be expressed and modeled in a clear form. The process according to the application is fit for cogeneric transistor, e.g. BJT, HBT etc. A GaAs HBT transistor has been demonstrated as an example in this paper.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device measurement; semiconductor device testing; GaAs; HBT transistors; S-parameters; cogeneric transistors; microwave device characterization; test & measure application; Calibration; Circuits; Electrical resistance measurement; Instruments; Microwave devices; Microwave measurements; Probes; Radio frequency; Resistors; Testing;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606995
