Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes: Theoretical analysis

In this paper, the temperature-pattern dependence (T-PD) of initial/residual carrier density, Ni, of high-speed digitally modulated uncooled semiconductor laser diode has been investigated in details. The temperature dependence (TD) of N_ii has been calculated according to the TD of threshold carrier density, N_th, analytically and not by the well known exponential Pankove. While the pattern dependence (PD) of N_i has been calculated according to the effect of the number of ldquo0rdquo bits preceding the considered ldquo1rdquo bit, N_bit, and bitrate, Brate, on the carrier density through the time interval between the ldquo1rdquo bits. We show, for the first time, that Ni may increase or decrease, i. e. fluctuate, with temperature of operation, T, depending on the time interval between the previous and the next ldquo1rdquo bits.