A transistor measurement setup for microwave high power amplifiers design

Author

Teyssier, Jean-Pierre ; Barataud, Denis ; Charbonniaud, Christophe ; De Groote, Fabien ; Verspecht, Jan ; Nébus, Jean-Michel ; Quéré, Raymond

Author_Institution

IRCOM, Limoges Univ., France

Volume

5

fYear

2005

fDate

4-7 Dec. 2005

Abstract

This paper presents our view of a powerful and versatile measurement setup dedicated to nonlinear characterization and modeling of high power transistor. Our bench with on-wafer capabilities captures time domain waveforms under passive load-pull and source-pull conditions. Moreover, harmonic load-pull and pulsed mode of I(V) and/or RF operation are available. Due to the combination of several innovative features, high power measurements up to 18 GHz and 50 Watts with a gamma load factor up to 0.85 at the probe tips are made possible.

Keywords

microwave power amplifiers; microwave power transistors; semiconductor device measurement; RF operation; gamma load factor; harmonic load-pull; high power transistor; microwave high power amplifiers design; on-wafer capabilities; passive load-pull conditions; pulsed mode; source-pull conditions; time domain waveforms; transistor measurement setup; High power amplifiers; Microwave measurements; Microwave transistors; Power amplifiers; Power measurement; Power transistors; Pulse amplifiers; Pulse measurements; Radio frequency; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1607002

Filename

1607002