DocumentCode
3416042
Title
Inherently safe DC/DC converter using a normally-on SiC JFET
Author
Kelley, R.L. ; Mazzola, M.S. ; Draper, W.A. ; Casady, J.
Author_Institution
SemiSouth Lab., Inc., MS, USA
Volume
3
fYear
2005
fDate
6-10 March 2005
Firstpage
1561
Abstract
This paper examines the design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs. The converter is targeted for ambient temperatures of 225 °C. A demonstration converter board has been completed and tested illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-V dc output from a 25-V dc input. The converter has also demonstrated conventional "off-line" 120 VAC operation to develop a 12 V dc output.
Keywords
DC-DC power convertors; junction gate field effect transistors; power field effect transistors; silicon compounds; 12 V; 120 V; 225 degC; 25 V; 5 V; DC/DC converter; SiC; normally on silicon-carbide based power JFET; self-biased gate driver; Automatic testing; Buck converters; Circuits; DC-DC power converters; Inductors; Laboratories; Silicon carbide; Switches; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Print_ISBN
0-7803-8975-1
Type
conf
DOI
10.1109/APEC.2005.1453244
Filename
1453244
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