Title :
Inherently safe DC/DC converter using a normally-on SiC JFET
Author :
Kelley, R.L. ; Mazzola, M.S. ; Draper, W.A. ; Casady, J.
Author_Institution :
SemiSouth Lab., Inc., MS, USA
Abstract :
This paper examines the design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs. The converter is targeted for ambient temperatures of 225 °C. A demonstration converter board has been completed and tested illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-V dc output from a 25-V dc input. The converter has also demonstrated conventional "off-line" 120 VAC operation to develop a 12 V dc output.
Keywords :
DC-DC power convertors; junction gate field effect transistors; power field effect transistors; silicon compounds; 12 V; 120 V; 225 degC; 25 V; 5 V; DC/DC converter; SiC; normally on silicon-carbide based power JFET; self-biased gate driver; Automatic testing; Buck converters; Circuits; DC-DC power converters; Inductors; Laboratories; Silicon carbide; Switches; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1453244
