Title :
Fully digital adaptive DC-DC converter based on improved PSM in 90 nm CMOS
Author :
Hangbiao Li ; Ping Luo ; Bo Zhang ; Lei Liu ; Kun Du
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A fully digital adaptive DC-DC converter based on improved pulse skip modulation (PSM) in 90 nm CMOS is proposed in this paper. The controller of the converter includes a delayline, a slacktime detector, a finite-state machine and a variable pulse-width generator. The structure of the controller of the proposed adaptive DC-DC converter is very simple and can be realized by digital design methodology and process. The converter is designed in 90 nm CMOS process, operating typically at 1.5 MHz. The post-simulation results show that the output voltage of the converter is adjusted ranged from 0.7 V to 1.5 V to the varied frequency ranged from 62.5 MHz to 250 MHz of the digital load circuit.
Keywords :
CMOS integrated circuits; DC-DC power convertors; pulse modulation; CMOS process; PSM; delayline; digital design methodology; digital load circuit; finite-state machine; frequency 1.5 MHz; frequency 62.5 MHz to 250 MHz; fully digital adaptive dc-dc converter; improved pulse skip modulation; size 90 nm; slacktime detector; variable pulsewidth generator; voltage 0.7 V to 1.5 V; DH-HEMTs;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467630