MOSFET low frequency noise prediction and control

Low frequency noise is an important figure of merit in electron devices. For MOSFET, the most important electron device, the study of low frequency noise is most comprehensive. However, the best one can do is model the trend. Due to the lack of a quantitative understanding, the common practice to reduce noise is through empirical optimization. As scaling continues, low frequency noise becomes a new limiting factor. The need for better understanding and therefore better control of low frequency noise becomes paramount. In this paper, our recent breakthrough in this decades old challenge is summarized.