Title :
New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior
Author :
Pfaffenlehner, M. ; Biermann, J. ; Schaeffer, C. ; Schulze, H.
Author_Institution :
Infineon Technol. AG, Munchen, Germany
Abstract :
IGBT3 technology, with its trench cell and field stop is introduced for high voltage applications. The field stop concept has to be optimized, if modules with a high rated current are used in applications with a high stray inductance, to ensure the controllability of the voltage overshoot. The realized devices have greatly reduced losses in typical applications and allow an increase of the power output of converters.
Keywords :
insulated gate bipolar transistors; isolation technology; power semiconductor switches; 3300 V; IGBT3 technology; converter power output increase; device ruggedness; high rated current modules; high voltage devices; optimized field stop construction; smooth IGBT switching behavior; stray inductance; trench IGBT; trench cell; voltage overshoot control; Insulated gate bipolar transistors; Isolation technology; Power semiconductor switches;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332872
