Title :
Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT]
Author :
Oyama, K. ; Arai, T. ; Saitou, K. ; Masuda, K. ; Mori, M.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki-Ken, Japan
Abstract :
This paper describes a new advanced HiGT (high-conductivity IGBT) which is the combination of a low injection (LiPT: low injection punch-through) p-emitter and a planar gate with a hole barrier and punchthrough structure. The experimental results and theoretical discussion of this 4.5 kV advanced HiGT show remarkable low-loss characteristics and strong short-circuit immunity. These results prove for the first time that a hole barrier integrated in a planar IGBT is effective even with LiPT.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; 4.5 kV; LiPT emitter; high-conductivity IGBT; hole barrier; low-injection punch-through structure; low-loss HiGT; planar gate; short-circuit immunity; Insulated gate bipolar transistors; Power FETs; Power bipolar transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332873
