• DocumentCode
    3416247
  • Title

    Characteristics of higher-κ dielectric LaLuO3 with TiN as gate stack

  • Author

    Yu, Weimin ; Zhang, Boming ; Zhao, Q.T. ; Buca, Dan ; Nichau, A. ; Schubert, Jeffrey ; Wang, Xiongfei ; Mantl, Siegfried

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf., Shanghai, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Higher-κ dielectric LaLuO3, deposited by MBD, with TiN as gate stack was integrated into SiGe p-MOSFETs. The transistors showed good characteristics. An interfacial layer between LaLuO3 and TiN was found, resulting in a smaller-than-normal CET. MBD deposition leads to unconformity on sidewall of the transistor, inducing a gate leakage path.
  • Keywords
    Ge-Si alloys; MOSFET; high-k dielectric thin films; lanthanum compounds; leakage currents; titanium compounds; LaLuO3; MBD deposition; SiGe; SiGe p-MOSFET; TiN; TiN gate stack; gate leakage path; higher-κ dielectric; interfacial layer; molecular-beam deposition; transistor sidewall; Dielectrics; Logic gates; MOSFET circuits; Silicon; Silicon germanium; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467641
  • Filename
    6467641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416247