Title :
Characteristics of higher-κ dielectric LaLuO3 with TiN as gate stack
Author :
Yu, Weimin ; Zhang, Boming ; Zhao, Q.T. ; Buca, Dan ; Nichau, A. ; Schubert, Jeffrey ; Wang, Xiongfei ; Mantl, Siegfried
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Higher-κ dielectric LaLuO3, deposited by MBD, with TiN as gate stack was integrated into SiGe p-MOSFETs. The transistors showed good characteristics. An interfacial layer between LaLuO3 and TiN was found, resulting in a smaller-than-normal CET. MBD deposition leads to unconformity on sidewall of the transistor, inducing a gate leakage path.
Keywords :
Ge-Si alloys; MOSFET; high-k dielectric thin films; lanthanum compounds; leakage currents; titanium compounds; LaLuO3; MBD deposition; SiGe; SiGe p-MOSFET; TiN; TiN gate stack; gate leakage path; higher-κ dielectric; interfacial layer; molecular-beam deposition; transistor sidewall; Dielectrics; Logic gates; MOSFET circuits; Silicon; Silicon germanium; Tin; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467641
