1200V reverse blocking IGBT with low loss for matrix converter

This paper presents, for the first time, the design concepts of an isolation type 1200 V reverse blocking IGBT (RB-IGBT) for matrix converters. The device features thin wafer technology and a deep boron diffusion technique. From experimental results, it has been found that the 1200 V RB-IGBT attains about 20% reduction in total generated loss when compared to the combination of the IGBT and the diode, while keeping improved blocking capability with both polarities. A high efficiency matrix converter can be achieved by using the RB-IGBTs and this has a great possibility to replace the conventional DC-linked-type circuits.