1200V reverse conducting IGBT

Author

Takahashi, Hideki ; Yamamoto, Aya ; Aono, Shinji ; Minato, Tadaharu

Author_Institution

Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

133

Lastpage

136

Abstract

This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the fabricated 1200 V/100 A chip can achieve a level comparable to those of conventional 3rd generation PT-type IGBT and FWD pair. The trade off with Vce(sat) and turn-off loss and the correlation between Vf and Err is almost the same as the conventional 3rd generation PT-type IGBT and FWD pair.

Keywords

carrier lifetime; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; power semiconductor diodes; 100 A; 1200 V; FWD; He; RC-IGBT; forward voltage drop; free wheeling diode; helium-irradiation carrier lifetime controlling technology; reverse conducting IGBT; thin wafer process technology; turn-off energy loss; Charge carrier lifetime; Insulated gate bipolar transistors; Power FETs; Power bipolar transistors; Power semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332880

Filename

1332880