Electrophotographic patterning of a-Si:H

Author

Gleskova, H. ; Wagner, S. ; Shen, D.S.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1995

fDate

25-26 Sep 1995

Firstpage

16

Lastpage

19

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates

Keywords

electrophotography; elemental semiconductors; etching; glass; hydrogen; liquid crystal displays; masks; semiconductor technology; silicon; substrates; 0.1 mum; 50 mum; LCD; a-Si:H; electrophotographic patterning; etch mask; glass foil; glass substrates; lift-off material; roll-to-roll high-throughput patterning; thin films; toner pattern; xerographic copier; Amorphous silicon; Etching; Glass; Laser beam cutting; Photoconductivity; Printers; Printing; Semiconductor thin films; Substrates; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on

Conference_Location

Bethlehem, PA

Print_ISBN

0-7803-3056-0

Type

conf

DOI

10.1109/AMLCD.1995.540950

Filename

540950