Title :
Electrophotographic patterning of a-Si:H
Author :
Gleskova, H. ; Wagner, S. ; Shen, D.S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates
Keywords :
electrophotography; elemental semiconductors; etching; glass; hydrogen; liquid crystal displays; masks; semiconductor technology; silicon; substrates; 0.1 mum; 50 mum; LCD; a-Si:H; electrophotographic patterning; etch mask; glass foil; glass substrates; lift-off material; roll-to-roll high-throughput patterning; thin films; toner pattern; xerographic copier; Amorphous silicon; Etching; Glass; Laser beam cutting; Photoconductivity; Printers; Printing; Semiconductor thin films; Substrates; Thin film circuits;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540950
