Title :
First principles guiding principles for the switching process in oxide ReRAM
Author :
Shiraishi, Kotaro ; Yang, Michael Ying ; Kamiya, K. ; Magyari-Kope, B. ; Niwa, Masaaki ; Nishi, Yoshio
Author_Institution :
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
First principles calculations became crucial techniques for designing future electronics engineering. In this paper, we describe the typical examples which aim the designing of future electron devices such as modern resistive random access memories (ReRAM) by using the knowledge obtained by the first principles calculations.
Keywords :
random-access storage; electron device; first principles guiding principle; oxide ReRAM; resistive random access memories; switching process; Bonding; Educational institutions; Electrodes; Electron devices; Materials; Random access memory; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467648
