DocumentCode
3416376
Title
First principles guiding principles for the switching process in oxide ReRAM
Author
Shiraishi, Kotaro ; Yang, Michael Ying ; Kamiya, K. ; Magyari-Kope, B. ; Niwa, Masaaki ; Nishi, Yoshio
Author_Institution
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
First principles calculations became crucial techniques for designing future electronics engineering. In this paper, we describe the typical examples which aim the designing of future electron devices such as modern resistive random access memories (ReRAM) by using the knowledge obtained by the first principles calculations.
Keywords
random-access storage; electron device; first principles guiding principle; oxide ReRAM; resistive random access memories; switching process; Bonding; Educational institutions; Electrodes; Electron devices; Materials; Random access memory; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467648
Filename
6467648
Link To Document