Title :
An analytical model for a-Si:H transistors based on TFT device characteristics
Author :
GadelRab, Serag M. ; Chamberlain, Savvas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The authors present a simple analytical model which is targeted for the design of AMLCD driver circuits. The model achieves excellent agreement with experimental data by modeling the TFT current as the summation of two components: a surface and a bulk component. The equations that describe this current-voltage behavior are presented. In order to model the transistor in the saturation region, a simple expression for channel length modulation is utilised. The model uses four device parameters that are obtained from direct measurements of the a-Si:H TFT characteristics: the mobility, the threshold voltage and two physically based parameters to account for bulk conduction and channel length modulation. These parameters are used for quick calibration of the model to any TFT fabrication process
Keywords :
amorphous semiconductors; calibration; driver circuits; elemental semiconductors; liquid crystal displays; semiconductor device models; semiconductor process modelling; silicon; thin film transistors; AMLCD driver circuits; Si:H; TFT fabrication; a-Si:H transistors; analytical model; bulk component; bulk conduction; calibration; channel length modulation; current-voltage behavior; equations; linear region; mobility; physically based parameters; saturation region; surface and a bulk component; threshold voltage; Analytical models; Calibration; Circuit analysis computing; Driver circuits; Equations; Fabrication; Intrusion detection; Length measurement; Thin film transistors; Threshold voltage;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540954
