• DocumentCode
    3416510
  • Title

    High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal

  • Author

    Sawada, M. ; Sugi, A. ; Iwaya, M. ; Takagiwa, K. ; Matsunaga, S. ; Kajiwara, S. ; Mochizuki, K. ; Fujishima, N.

  • Author_Institution
    Device Technol. Lab., Fuji Electr. Adv. Technol. Co., Ltd, Nagano, Japan
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    We proposed a low side N-channel trench lateral power MOSFET (TLPM) in (N.Fujishima et al, Proc. of IEDM 2002, p.455-458). In this paper, a high side N-channel TLPM, which is isolated from the substrate, is proposed, fabricated and characterized for the first time. The fabricated high side TLPM devices exhibit a specific on-resistance of 17 mΩ-mm2 with a breakdown voltage of 21 V.
  • Keywords
    copper; power MOSFET; semiconductor device breakdown; semiconductor device metallisation; 21 V; Cu; breakdown voltage; device specific on-resistance; high density MOSFET; high side N-channel trench lateral power MOSFET; low on-resistance MOSFET; substrate isolated TLPM; thick copper metallization; Copper; Power MOSFETs; Semiconductor device metallization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332893
  • Filename
    1332893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416510