An alternative transparent conducting oxide to ITO for the a-Si:H TFT-LCD applications

Author

Lan, Je-Hsiung ; Kanicki, Jerzy ; Catalan, Anthony ; Keane, James

Author_Institution

Center for Display Technol. & Manuf., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

25-26 Sep 1995

Firstpage

54

Lastpage

57

Abstract

We propose aluminum doped zinc oxide (AZO), for the first time, as an alternative transparent conducting oxide to indium tin oxide (ITO) for the application to a-Si:H TFT-LCDs. AZO films have an optical transmittance (~92% in the visible light spectrum) and electrical resistivity (~7.5×10(-4) Ω-cm) comparable to ITO films. Unlike ITO films, AZO films show good chemical stability during the deposition of a-SiNx:H layer and no optical transparency degradation has been found. In addition, in the patterning of AZO films, a high etch rate (-103 Å/sec), no etching residue formation, and uniform etching for micro-patterns have been established for AZO films

Keywords

aluminium; electrical resistivity; insulating thin films; liquid crystal displays; optical films; sputtered coatings; stability; thin film transistors; transparency; zinc compounds; Si:H; SiN:H; a-Si:H TFT-LCD; a-SiNx:H; electrical resistivity; etch rate; micropatterns; optical transparency degradation; residue formation; transparent conducting oxide; uniform etching; Degradation; Electrodes; Etching; Hydrogen; Indium tin oxide; Optical films; Plasma applications; Plasma chemistry; Plasma temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on

Conference_Location

Bethlehem, PA

Print_ISBN

0-7803-3056-0

Type

conf

DOI

10.1109/AMLCD.1995.540959

Filename

540959