Title :
An alternative transparent conducting oxide to ITO for the a-Si:H TFT-LCD applications
Author :
Lan, Je-Hsiung ; Kanicki, Jerzy ; Catalan, Anthony ; Keane, James
Author_Institution :
Center for Display Technol. & Manuf., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We propose aluminum doped zinc oxide (AZO), for the first time, as an alternative transparent conducting oxide to indium tin oxide (ITO) for the application to a-Si:H TFT-LCDs. AZO films have an optical transmittance (~92% in the visible light spectrum) and electrical resistivity (~7.5×10(-4) Ω-cm) comparable to ITO films. Unlike ITO films, AZO films show good chemical stability during the deposition of a-SiNx:H layer and no optical transparency degradation has been found. In addition, in the patterning of AZO films, a high etch rate (-103 Å/sec), no etching residue formation, and uniform etching for micro-patterns have been established for AZO films
Keywords :
aluminium; electrical resistivity; insulating thin films; liquid crystal displays; optical films; sputtered coatings; stability; thin film transistors; transparency; zinc compounds; Si:H; SiN:H; a-Si:H TFT-LCD; a-SiNx:H; electrical resistivity; etch rate; micropatterns; optical transparency degradation; residue formation; transparent conducting oxide; uniform etching; Degradation; Electrodes; Etching; Hydrogen; Indium tin oxide; Optical films; Plasma applications; Plasma chemistry; Plasma temperature; Zinc oxide;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540959
