DocumentCode
3416549
Title
A new high temperature electrode-barrier technology on high density ferroelectric capacitor structure
Author
Onishi, S. ; Nagata, M. ; Mitarai, S. ; Ito, Y. ; Kudo, J. ; Sakiyama, K. ; Desu, S.B. ; Bhatt, H.D. ; Vijay, D.P. ; Hwang, Y.
Author_Institution
Sharp Corp., Tenri, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
699
Lastpage
702
Abstract
This paper describes the novel stacked electrode structure, PtRhOx/PtRh/PtRhOx, applicable to stacked memory cells in the advanced ferroelectric memories. This structure acts as a stable bottom electrode on the polysilicon plug up to 700/spl deg/C, and reduces fatigue of PZT capacitor (less than 10% decrease in remanent polarization up to 10/sup 10/cycle), which indicates its promise as an electrode structure for advanced ferroelectric memory integration.
Keywords
electrodes; ferroelectric capacitors; ferroelectric storage; 700 C; PZT; PbZrO3TiO3; PtRhO-PtRh-PtRhO; PtRhOx/PtRh/PtRhOx stacked electrode; bottom electrode; fatigue; ferroelectric capacitor; ferroelectric memory; high temperature electrode barrier; polysilicon plug; remanent polarization; Annealing; Argon; Capacitors; Conductivity; Electrodes; Fatigue; Ferroelectric materials; Substrates; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554077
Filename
554077
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