Title :
Excimer laser crystallization of silicon films for AMLCDs
Author :
Kuriyama, Hiroyuki
Author_Institution :
R&D Headquarters, Sanyo Electr. Co. Ltd., Japan
Abstract :
Poly-Si thin-film transistors (TFTs) fabricated by a low-temperature process on glass substrates are being actively investigated as a fundamental technology for the next generation of active-matrix liquid-crystal displays (AMLCDs). The mobility of poly-Si TFTs exceeds that of conventional a-Si TFT active devices by over two orders of magnitude, permitting integration of peripheral drive circuits and increased aperture. Perfection of this technology promises the high definition, compactness, reduced cost, and increased reliability that is being demanded by the next generation of LCD panels. The key to establishing this low-temperature poly-Si TFT technology is the development of technology to form high-mobility, uniform poly-Si films on low-cost glass substrates. The author introduces research trends in this technology and future developments and problems, based on the the recrystallized poly-Si films using the excimer laser annealing method
Keywords :
crystallisation; elemental semiconductors; excimer lasers; laser beam annealing; liquid crystal displays; semiconductor technology; silicon; AMLCD; Si; Si films; TFT; active-matrix liquid-crystal displays; compactness; excimer laser crystallization; glass substrates; high-mobility uniform polysilicon films; integration of peripheral drive circuits; low-cost glass substrates; low-temperature polysilicon TFT technology; low-temperature process; mobility; reduced cost; reliability; Active matrix liquid crystal displays; Active matrix technology; Apertures; Circuits; Crystallization; Glass; Semiconductor films; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540965
