Title :
Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM
Author :
Jinfeng Kang ; Bin Gao ; Bing Chen ; Peng Huang ; Feifei Zhang ; Lifeng Liu ; Xiaoyan Liu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper presents a unified physical mechanism of TMO-RRAM to elucidate unipolar and bipolar resistive switching behaviors and the cell design methodology including based on the unified physical mechanism. The developed cell design methodology material-oriented cell engineering and innovative operation-scheme is implemented to the optimization of TMO-RRAM cells, identifying the validity of the methodology.
Keywords :
design; optimisation; random-access storage; TMO-RRAM; optimization design; oxide-based RRAM; physical mechanism; resistive switching; Current measurement; Design methodology; Electrical resistance measurement; Hafnium compounds; Resistance; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467659
