Forward transient behavior of PiN and super junction diodes

Author

Yamazaki, M. ; Kobayashi, H. ; Shinohara, S.

Author_Institution

Origin Electr. Co., Ltd, Tokyo, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

197

Lastpage

200

Abstract

It is known that the forward transient behavior of the diode has adverse effects like power losses and noise problems on switching power supplies. However, only a few attempts have been made to analyze the forward transient behavior, in contrast to the vigorous research activity in the reverse recovery process. In this study, the forward transient behavior of pin diodes is investigated and the effects of lifetime, doping concentration and thickness of each region of the diode on peak forward recovery voltage and forward recovery time are shown for the first time. Moreover, we demonstrate with simulated and measured results that the super junction diodes have significantly improved forward recovery characteristics.

Keywords

carrier lifetime; doping profiles; p-i-n diodes; power semiconductor diodes; semiconductor device measurement; semiconductor device models; transient response; PiN diode forward transient behavior; carrier lifetime; diode region thickness; doping concentration; forward recovery time; peak forward recovery voltage; super junction diodes; switching power supplies; Charge carrier lifetime; Power semiconductor diodes; Semiconductor device modeling; Transient response; p-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332899

Filename

1332899