Title :
Drain voltage dependence of on resistance in 700V super junction LDMOS transistor
Author :
Quddus, Mohammed Tanvir ; Tu, Larry ; Ishiguro, Takeshi
Author_Institution :
ON Semicond., Phoenix, AZ, USA
Abstract :
In this paper, the dependence of the specific on resistance RDS*A on drain voltage VD is presented for the first time for 700 V super junction (SJ) based multi-RESURF LDMOS transistors and such results are compared to those of single-RESURF (SR) and double-RESURF (DR) LDMOS transistors. Based on ISE based 3D device simulation results, it has been demonstrated that even the decrease in the width of the NP stripes of the SJ structure results in significant improvement in RDS*A. Such improvement suffers greatly at high drain bias VD due to an increased influence in the constriction of the current conduction path due to the large depletion effect.
Keywords :
power MOSFET; semiconductor device models; 700 V; NP stripe width; current conduction path constriction; depletion effect; double-RESURF transistors; multiple-RESURF LDMOS transistors; single-RESURF transistors; specific on resistance drain voltage dependence; super junction LDMOS transistor; Power MOSFETs; Semiconductor device modeling;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332900
