A new GaP/a-Si:H/Bulk solar cell

Author

Jian-Yuan Wang ; Jyi-Tsong Lin ; Ching-yao Pai ; Yu-Sheng Kuo ; Yi-Chuen Eng ; Po-Hsieh Lin

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper we present for the first time a new GaP/a-Si:H/bulkSi solar cell. According to Silvaco TACD simulations, the GaP/a-Si:H/bulkSi solar cell has a high short-circuit current due to the downward bandgap bending. Moreover, a high doping a-Si:H can lead to a upward bandgap bending, resulting in a high open-circuit voltage. Although the GaP/a-Si:H/bulkSi solar cell has a low short-circuit current, a compensation can be achieved by the cell area or texture techniques. Furthermore, an optimized open-circuit voltage of 0.758V is also achieved.

Keywords

III-V semiconductors; amorphous semiconductors; elemental semiconductors; energy gap; gallium compounds; hydrogen; short-circuit currents; silicon; solar cells; GaP-Si:H; Silvaco TACD simulation; cell area technique; compensation; downward bandgap bending; open-circuit voltage; short-circuit current; solar cell; texture technique; upward bandgap bending; Dielectrics; Doping; Materials; Modulation; Photonic band gap; Photovoltaic cells; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467663

Filename

6467663