• DocumentCode
    3416762
  • Title

    Dielectric breakdown mechanism in thick SiO2 films revisited

  • Author

    Kubota, Kei ; Kamakura, Yoshinari ; Taniguchi, Kenji ; Sugahara, Yoshiyuki ; Shimizu, Ryosuke

  • Author_Institution
    Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    The dielectric breakdown in thick (Tox>15 nm) SiO2 films is examined, focusing on its statistical properties. Time-dependent dielectric breakdown is measured using the Fowler-Nordheim and the substrate hot hole injection techniques, under various bias conditions. It is demonstrated that in thick oxide films, the Weibull slope is a function of the stress condition, and it is much smaller than the value predicted by the percolation theory. We discuss the effect of trapped holes on the breakdown statistics.
  • Keywords
    MOS capacitors; MOSFET; Weibull distribution; dielectric thin films; hot carriers; percolation; semiconductor device breakdown; silicon compounds; 15 nm; Fowler-Nordheim technique; MOS capacitors; MOSFET; SiO2; Weibull slope; breakdown statistical properties; dielectric thick films; percolation theory; stress conditions; substrate hot hole injection technique; time-dependent dielectric breakdown mechanism; trapped holes; Dielectric films; Hot carriers; MOS capacitors; MOSFETs; Silicon compounds; Weibull distributions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332907
  • Filename
    1332907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416762