Title :
Physically based simulation of strong charge multiplication events in power devices triggered by incident ions
Author :
Kaindl, W. ; Sölkner, G. ; Becker, H.W. ; Meijer, J. ; Schulze, H.J. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Germany
Abstract :
Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to 84Kr, 28Si, and 12C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier densities occurring in the interior of the device. Therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.
Keywords :
carrier density; cosmic rays; power semiconductor devices; radiation effects; semiconductor device models; C; Kr; Si; carrier density distribution; charge multiplication events; cosmic radiation; device structure radiation sensitivity; electric field spatial/temporal distribution; incident ion triggered events; ion irradiation; power devices; Charge carrier density; Cosmic rays; Power semiconductor devices; Radiation effects; Semiconductor device modeling;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332914
