DocumentCode
3416921
Title
Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)
Author
Vershinin, K. ; Sweet, M. ; Spulber, O. ; Hardikar, S. ; Luther-King, N. ; De Souza, M.M. ; Sverdloff, S. ; Narayanan, E.M.S.
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fYear
2004
fDate
24-27 May 2004
Firstpage
269
Lastpage
272
Abstract
In this paper, the performance of a 25 A 1.7 kV non punch through clustered insulated gate bipolar transistor, fabricated under a manufacturing environment is highlighted. In particular, the influence of the design parameters such as cathode cell spacing and cluster spacing on device performance is studied experimentally and the results are discussed.
Keywords
insulated gate bipolar transistors; power transistors; semiconductor device measurement; 1.7 kV; 25 A; NPT CIGBT; cathode cell spacing; cluster spacing; non punch through CIGBT; planar clustered insulated gate bipolar transistor; Insulated gate bipolar transistors; Power transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332917
Filename
1332917
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